Otros recursos de Patil, Samadhan B.

Resultados 1 - 10 de 36 de Patil, Samadhan B.. (0 segundos)


Documentos:
  1. Low Temperature Hot-Wire CVD Nitrides for Deep Sub-Micron CMOS Technologies (�)

    Patil, Samadhan B.; Vaidya, Sangeeta; Kumbhar, Alk; Dusane, R.O.; Chandorkar, A.N.; Ramgopal Rao, V.
    No abstract available.
    09-ene-2018

  2. Low Temperature Hot-Wire CVD Nitrides for Deep Sub-Micron CMOS Technologies (�)

    Patil, Samadhan B.; Vaidya, Sangeeta; Kumbhar, Alk; Dusane, R.O.; Chandorkar, A.N.; Ramgopal Rao, V.
    No abstract available.
    23-ene-2018

  3. Photoluminescent, wide-bandgap a-SiC:H alloy films deposited by Cat-CVD using acetylene (�)

    Kumbhar, Alka; Patil, Samadhan B.; Kumar, Sanjay; Lal, R.; Dusane, R.O.
    Hydrogenated amorphous silicon/carbon films (a-Si-C:H) are deposited from a silane and acetylene gas ...
    09-ene-2018

  4. Photoluminescent, wide-bandgap a-SiC:H alloy films deposited by Cat-CVD using acetylene (�)

    Kumbhar, Alka; Patil, Samadhan B.; Kumar, Sanjay; Lal, R.; Dusane, R.O.
    Hydrogenated amorphous silicon/carbon films (a-Si-C:H) are deposited from a silane and acetylene gas ...
    23-ene-2018

  5. Low temperature silicon nitride deposited by Cat-CVD for deep sub-micron metal–oxide–semiconductor devices (�)

    Patil, Samadhan B.; Kumbhar, Alka; Waghmare, Parag; Ramgopal Rao, V.; Dusane, R.O
    Silicon nitride as a gate dielectric can improve the performance of ULSI CMOS devices by decreasing ...
    09-ene-2018

  6. Low temperature silicon nitride deposited by Cat-CVD for deep sub-micron metal–oxide–semiconductor devices (�)

    Patil, Samadhan B.; Kumbhar, Alka; Waghmare, Parag; Ramgopal Rao, V.; Dusane, R.O
    Silicon nitride as a gate dielectric can improve the performance of ULSI CMOS devices by decreasing ...
    23-ene-2018

  7. Improvement in Gate Dielectric Quality of Ultra Thin a: SiN:H MNS Capacitor by Hydrogen Etching of the Substrate (�)

    Waghmare, Parag C.; Patil, Samadhan B.; Dusane, Rajiv O.; Rao, V.Ramgopal
    silicon nitride as an alternative gate dielectric. Silicon nitride can be deposited using several CVD
    09-ene-2018

  8. Improvement in Gate Dielectric Quality of Ultra Thin a: SiN:H MNS Capacitor by Hydrogen Etching of the Substrate (�)

    Waghmare, Parag C.; Patil, Samadhan B.; Dusane, Rajiv O.; Rao, V.Ramgopal
    silicon nitride as an alternative gate dielectric. Silicon nitride can be deposited using several CVD
    23-ene-2018

  9. Gas Phase Chemistry Study During Deposition of a-Si: H and μc-Si: H Films by HWCVD using Quadrupole Mass Spectrometry (�)

    Patil, Samadhan B.; Kumbhar, Alka A.; Dusane, R. O.
    Amorphous and microcrystalline silicon films were deposited by HWCVD under different deposition cond ...
    09-ene-2018

  10. Gas Phase Chemistry Study During Deposition of a-Si: H and μc-Si: H Films by HWCVD using Quadrupole Mass Spectrometry (�)

    Patil, Samadhan B.; Kumbhar, Alka A.; Dusane, R. O.
    Amorphous and microcrystalline silicon films were deposited by HWCVD under different deposition cond ...
    23-ene-2018

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