Otros recursos de Waghmare, Parag C.

Resultados 1 - 6 de 6 de Waghmare, Parag C.. (0 segundos)


Documentos:
  1. Improvement in Gate Dielectric Quality of Ultra Thin a: SiN:H MNS Capacitor by Hydrogen Etching of the Substrate (�)

    Waghmare, Parag C.; Patil, Samadhan B.; Dusane, Rajiv O.; Rao, V.Ramgopal
    To extend the scaling limit of thermal SiO2, in the ultra thin regime when the direct tunneling curr ...
    09-ene-2018

  2. Improvement in Gate Dielectric Quality of Ultra Thin a: SiN:H MNS Capacitor by Hydrogen Etching of the Substrate (�)

    Waghmare, Parag C.; Patil, Samadhan B.; Dusane, Rajiv O.; Rao, V.Ramgopal
    To extend the scaling limit of thermal SiO2, in the ultra thin regime when the direct tunneling curr ...
    23-ene-2018

  3. Ultra-thin silicon nitride by hot wire chemical vapor deposition (HWCVD) for deep sub-micron CMOS technologies (�)

    Waghmare, Parag C.; Patil, Samadhan B.; Kumbhar, Alka; Dusane, R.O.; Rao, V.Ramgopal
    silicon nitride film yields at 250 °C while maintaining their primary advantage of a higher
    06-ene-2018

  4. Ultra-thin silicon nitride by hot wire chemical vapor deposition (HWCVD) for deep sub-micron CMOS technologies (�)

    Waghmare, Parag C.; Patil, Samadhan B.; Kumbhar, Alka; Dusane, R.O.; Rao, V.Ramgopal
    silicon nitride film yields at 250 °C while maintaining their primary advantage of a higher
    23-ene-2018

  5. Nitrogen dilution effects on structural and electrical properties of hot-wire-deposited a-SiN:H films for deep-sub-micron CMOS technologies (�)

    Waghmare, Parag C.; Patil, Samadhan B.; Kumbhar, Alka A.; Rao, Ramgopal; Dusane, R.O.
    Hot-wire chemical vapor-deposited silicon nitride is a potential dielectric material compared to glo ...
    06-ene-2018

  6. Nitrogen dilution effects on structural and electrical properties of hot-wire-deposited a-SiN:H films for deep-sub-micron CMOS technologies (�)

    Waghmare, Parag C.; Patil, Samadhan B.; Kumbhar, Alka A.; Rao, Ramgopal; Dusane, R.O.
    Hot-wire chemical vapor-deposited silicon nitride is a potential dielectric material compared to glo ...
    23-ene-2018

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