Resource data
MOSFET channel engineering using strained Si and strained Ge grown on SiGe virtual substrates
Lee, Minjoo Lawrence, 1976-
Location:
http://hdl.handle.net/1721.1/7966
54768591
Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 2003.
Belongs to: DSpace at MIT
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Detalles del recurso
|
MOSFET channel engineering using strained Si and strained Ge grown on SiGe virtual substrates
|
| Id. |
1486268 |
| Idioma |
eng
|
| Titulo |
MOSFET channel engineering using strained Si and strained Ge grown on SiGe virtual substrates |
| Autor(es) |
Lee, Minjoo Lawrence, 1976-
|
| Location |
http://hdl.handle.net/1721.1/7966
54768591
|
| Versión |
1.0 |
| Estado |
Final
|
| Descripción |
Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 2003.
|
| Tipo |
161 p.
10952694 bytes
10952453 bytes
application/pdf
application/pdf
|
| Palabras clave |
Materials Science and Engineering.
|
| Tipo de recurso |
Thesis
|
| Tipo de Interactividad |
Expositivo
|
| Nivel de Interactividad |
muy bajo
|
| Audiencia |
Estudiante
Profesor
Autor
|
| Estructura |
Atomic |
| Coste |
no
|
| Copyright |
sí
|
|
M.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission. |
| Formatos |
161 p.
10952694 bytes
10952453 bytes
application/pdf
application/pdf
|
| Requerimientos técnicos |
Browser: Any
|
| Fecha de contribución |
07-may-2008 |
| Contacto |
|
| 
