Resource data
High mobility strained Si/SiGe heterostructure MOSFETs : channel engineering and virtual substrate optimization
Leitz, Christopher W. (Christopher William), 1976-
Location:
http://hdl.handle.net/1721.1/8440
50658402
Thesis (Ph.D.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 2002.
Belongs to: DSpace at MIT
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Detalles del recurso
|
High mobility strained Si/SiGe heterostructure MOSFETs : channel engineering and virtual substrate optimization
|
| Id. |
1486962 |
| Idioma |
eng
|
| Titulo |
High mobility strained Si/SiGe heterostructure MOSFETs : channel engineering and virtual substrate optimization |
| Autor(es) |
Leitz, Christopher W. (Christopher William), 1976-
|
| Location |
http://hdl.handle.net/1721.1/8440
50658402
|
| Versión |
1.0 |
| Estado |
Final
|
| Descripción |
Thesis (Ph.D.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 2002.
|
| Tipo |
174 leaves
12400141 bytes
12399898 bytes
application/pdf
application/pdf
|
| Palabras clave |
Materials Science and Engineering.
|
| Tipo de recurso |
Thesis
|
| Tipo de Interactividad |
Expositivo
|
| Nivel de Interactividad |
muy bajo
|
| Audiencia |
Estudiante
Profesor
Autor
|
| Estructura |
Atomic |
| Coste |
no
|
| Copyright |
sí
|
|
M.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission. |
| Formatos |
174 leaves
12400141 bytes
12399898 bytes
application/pdf
application/pdf
|
| Requerimientos técnicos |
Browser: Any
|
| Fecha de contribución |
07-may-2008 |
| Contacto |
|
| 
