Resource data
Transfer matrix method for a dynamical mesoscopic system
Yakubo, K. ???, ??
Location:
http://hdl.handle.net/2115/5651
PHYSICAL REVIEW E. 57(3), 1998, 3602-3610
http://dx.doi.org/10.1103/PhysRevE.57.3602
A transfer matrix method for analyzing quantum transport in harmonically driven systems with spatiotemporal
coherence has been developed. In such systems, the energy conservation law is violated, and transport
occurs through an infinite number of sideband states. This transfer matrix method enables us to compute
transmission and reflection probabilities of such dynamical mesoscopic systems without consuming a large
amount of computing time and memory space. We apply this technique to photon-assisted tunneling (PAT) in
a dual-gate field-effect transistor, and demonstrate the possibility of observing resonant level splittings due to
the dynamical Stark effect in dual-gate PAT devices.
Belongs to: Hokkaido University Collection of Scholarly and Academic Papers
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Detalles del recurso
|
Transfer matrix method for a dynamical mesoscopic system
|
| Id. |
5709663 |
| Idioma |
inglés
|
| Titulo |
Transfer matrix method for a dynamical mesoscopic system |
| Autor(es) |
Yakubo, K. ???, ?? |
| Location |
http://hdl.handle.net/2115/5651
PHYSICAL REVIEW E. 57(3), 1998, 3602-3610
http://dx.doi.org/10.1103/PhysRevE.57.3602
|
| Versión |
1.0 |
| Estado |
Final
|
| Descripción |
A transfer matrix method for analyzing quantum transport in harmonically driven systems with spatiotemporal
coherence has been developed. In such systems, the energy conservation law is violated, and transport
occurs through an infinite number of sideband states. This transfer matrix method enables us to compute
transmission and reflection probabilities of such dynamical mesoscopic systems without consuming a large
amount of computing time and memory space. We apply this technique to photon-assisted tunneling (PAT) in
a dual-gate field-effect transistor, and demonstrate the possibility of observing resonant level splittings due to
the dynamical Stark effect in dual-gate PAT devices. |
| Tipo |
136070 bytes application/pdf |
| Palabras clave |
421.3 |
| Tipo de recurso |
article
|
| Tipo de Interactividad |
Expositivo
|
| Nivel de Interactividad |
muy bajo
|
| Audiencia |
Estudiante
Profesor
Autor
|
| Estructura |
Atomic |
| Coste |
no
|
| Copyright |
sí
|
|
Copyright © 1998 American Physical Society |
| Formatos |
136070 bytes application/pdf |
| Requerimientos técnicos |
Browser: Any |
| Relación |
[References] http://www.aps.org/
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| Fecha de contribución |
25-oct-2007 |
| Contacto |
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