Resource data
A cinética ultra-rápida de excitaçõeselementares em semicondutoresfotoexcitados
Rogerio Moreira de Souza
Location:
http://www.cbc.ufms.br/tedesimplificado/tde_busca/arquivo.php?codArquivo=5
In this work it is introduced some results of the studies of kineticevolution to the equilibrium state of a photo-excited semiconductors. Theequations of transistors that describes the evolution to the equilibrium wasobtained through the Statistics Operator Method of not-equilibrium in Zubarevversion. The semiconductor is described in terms of having a charge (Electronsand hole photo-injecteds through an external source of energy) interacting withone another and with a Crystal clear net (phonons). On the model areconsidered the effects of direct recombination to the pair Electron hole,dissemination ambipolar and blindagem interaction electron-phonon. Thephonons group longitudinals optic (LO) and transversals optic (TO) are treatedlike groups out of equilibrium thermal while the groups of phononslongitudinals acoustic (LA) are taken in permanent equilibrium with thermalreservour. Statistic results are showed to the Arseneto de Gálio (GaAs)evidencing not only the transient state but also the stationary state of theplasma. Besides it is introduced a first result about the use of a statistic notconventional (Renyi's statistic) to description of the group phonons LO group.
Belongs to: BDTD Ibict
Descargar SCORM
¡Sea el primero en solicitar este recurso!
Para poder solicitar este recurso debe identificarse como usuario de la biblioteca
Users rating
No hay ninguna valoración para este recurso. Sea el primero en
valorar este recurso.
Detalles del recurso
|
A cinética ultra-rápida de excitaçõeselementares em semicondutoresfotoexcitados
|
| Id. |
6247277 |
| Idioma |
PT
|
| Titulo |
A cinética ultra-rápida de excitaçõeselementares em semicondutoresfotoexcitados |
| Autor(es) |
Rogerio Moreira de Souza |
| Location |
http://www.cbc.ufms.br/tedesimplificado/tde_busca/arquivo.php?codArquivo=5
|
| Versión |
1.0 |
| Estado |
Final
|
| Descripción |
In this work it is introduced some results of the studies of kineticevolution to the equilibrium state of a photo-excited semiconductors. Theequations of transistors that describes the evolution to the equilibrium wasobtained through the Statistics Operator Method of not-equilibrium in Zubarevversion. The semiconductor is described in terms of having a charge (Electronsand hole photo-injecteds through an external source of energy) interacting withone another and with a Crystal clear net (phonons). On the model areconsidered the effects of direct recombination to the pair Electron hole,dissemination ambipolar and blindagem interaction electron-phonon. Thephonons group longitudinals optic (LO) and transversals optic (TO) are treatedlike groups out of equilibrium thermal while the groups of phononslongitudinals acoustic (LA) are taken in permanent equilibrium with thermalreservour. Statistic results are showed to the Arseneto de Gálio (GaAs)evidencing not only the transient state but also the stationary state of theplasma. Besides it is introduced a first result about the use of a statistic notconventional (Renyi's statistic) to description of the group phonons LO group. |
| Tipo |
PDF |
| Palabras clave |
Cinética ultra-rápida |
| Tipo de recurso |
Electronic Thesis or Dissertation
Tese ou Dissertacao Eletronica
|
| Tipo de Interactividad |
Expositivo
|
| Nivel de Interactividad |
muy bajo
|
| Audiencia |
Estudiante
Profesor
Autor
|
| Estructura |
Atomic |
| Coste |
no
|
| Copyright |
sí
|
|
Liberar o conteúdo dos arquivos para acesso público |
| Formatos |
PDF |
| Requerimientos técnicos |
Browser: Any |
| Fecha de contribución |
26-sep-2008 |
| Contacto |
|
|