1) La descarga del recurso depende de la página de origen
2) Para poder descargar el recurso, es necesario ser usuario registrado en Universia


Opción 1: Descargar recurso

Opción 2: Descargar recurso

Detalles del recurso

Descripción

Prolonged 500 degrees Celsius to 700 degrees Celsius electrical testing data from 4H-SiC junction field effect transistor (JFET) integrated circuits (ICs) are combined with post-testing microscopic studies in order to gain more comprehensive understanding of the durability limits of the present version of NASA Glenn's extreme temperature microelectronics technology. The results of this study support the hypothesis that T 500 degrees Celsius durability-limiting IC failure initiates with thermal-stress-related crack formation where dielectric passivation layers overcoat micron-scale vertical features including patterned metal traces.

Pertenece a

NASA Technical Reports Server (NTRS)  

Autor(es)

Chen, Liangyu -  Spry, David J. -  Neudeck, Philip G. -  Lukco, Dorothy -  Beheim, Glenn M. -  Chang, Carl W. - 

Id.: 69714108

Versión: 1.0

Estado: Final

Tipo:  application/pdf - 

Palabras claveElectronics and Electrical Engineering - 

Cobertura:  Unclassified, Unlimited, Publicly available - 

Tipo de recurso: GRC-E-DAA-TN35563  -  European Conference on Silicon Carbide and Related Materials (ECSCRM) 2016; 25-29 Sep. 2016; Halkidiki; Greece  - 

Tipo de Interactividad: Expositivo

Nivel de Interactividad: muy bajo

Audiencia: Estudiante  -  Profesor  -  Autor  - 

Estructura: Atomic

Coste: no

Copyright: sí

: Copyright, Distribution as joint owner in the copyright

Formatos:  application/pdf - 

Requerimientos técnicos:  Browser: Any - 

Relación: [IsBasedOn] CASI

Fecha de contribución: 12-mar-2017

Contacto:

Localización:

Otros recursos del mismo autor(es)

  1. Experimentally Observed Electrical Durability of 4H-SiC JFET ICs Operating from 500 C to 700 C This ECSCRM 2016 submission presents further electrical testing and microscopic post-failure studies...
  2. 500 C Electronic Packaging and Dielectric Materials for High Temperature Applications High-temperature environment operable sensors and electronics are required for exploring the inner s...
  3. Processing and Characterization of Thousand-Hour 500 C Durable 4H-SiC JFET Integrated Circuits This work reports fabrication and testing of integrated circuits (ICs) with two levels of interconne...
  4. Demonstration of a Packaged Capacitive Pressure Sensor System Suitable for Jet Turbofan Engine Health Monitoring In this paper, the development and characterization of a packaged pressure sensor system suitable fo...
  5. Processing and Characterization of Thousand-Hour 500 C Durable 4H-SiC JFET Integrated Circuits This work reports fabrication and testing of integrated circuits (ICs) with two levels of interconne...

Otros recursos de la mismacolección

  1. Demonstration of Numerical Equivalence of Ensemble and Spectral Averaging in Electromagnetic Scattering by Random Particulate Media The numerically exact superposition T-matrix method is used to model far-field electromagnetic scatt...
  2. Microbial Monitoring from the Frontlines to Space: A Successful Validation of a Department of Defense (DoD) Funded Small Business Innovation Research (SBIR) Technology on Board the International Space Station (ISS) The RAZOR EX (Registered Trademark) PCR unit was initially developed by the DoD as part of an SBIR p...
  3. TEM Analysis of Diffusion-Bonded Silicon Carbide Ceramics Joined Using Metallic Interlayers Silicon Carbide (SiC) is a promising material for thermostructural applications due to its excellent...
  4. Sensitivity of the Asteroid Redirect Robotic Mission (ARRM) to Launch Date and Asteroid Stay Time National Aeronautics and Space Administrations (NASAs) proposed Asteroid Redirect Mission (ARM) is b...
  5. Creep, Fatigue and Environmental Interactions and Their Effect on Crack Growth in Superalloys Complex interactions of creep/fatigue/environment control dwell fatigue crack growth (DFCG) in super...

Aviso de cookies: Usamos cookies propias y de terceros para mejorar nuestros servicios, para análisis estadístico y para mostrarle publicidad. Si continua navegando consideramos que acepta su uso en los términos establecidos en la Política de cookies.