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Improvement of the adhesion of gold films to GaAs substrates by irradiation with a beam of high energy heavy ions was studied by Scotch Tape, scrub, and scratch test methods. Simple measurements of the effect of irradiation on the electrical contact properties of the Au/GaAs interface were also made. Substrate materials were taken from four differently doped GaAs wafers, thus providing a selection of substrate electronic properties.

The results indicate dependence of the ion dose threshold for improved adhesion on the bulk electronic properties of the substrate.

Pertenece a



Paine, Scott Nelson - 

Id.: 71022953

Versión: 1.0

Estado: Final

Tipo:  application/pdf - 

Tipo de recurso: Thesis  -  NonPeerReviewed  - 

Tipo de Interactividad: Expositivo

Nivel de Interactividad: muy bajo

Audiencia: Estudiante  -  Profesor  -  Autor  - 

Estructura: Atomic

Coste: no

Copyright: sí

Formatos:  application/pdf - 

Requerimientos técnicos:  Browser: Any - 

Relación: [References] http://resolver.caltech.edu/CaltechTHESIS:02202018-132931271
[References] https://thesis.library.caltech.edu/10725/

Fecha de contribución: 21-feb-2018


* Paine, Scott Nelson (1984) High Energy Heavy Ion Beam Enhanced Adhesion of Gold Films to GaAs. Senior thesis (Major), California Institute of Technology. doi:10.7907/Z9XD0ZWZ. http://resolver.caltech.edu/CaltechTHESIS:02202018-132931271

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