Detalles del recurso

Descripción

One of the major challenges facing the rapidly growing field of two-dimensional (2D) transition metal dichalcogenides (TMDCs) is the development of growth techniques to enable large-area synthesis of high-quality materials. Chemical vapor deposition (CVD) is one of the leading techniques for the synthesis of TMDCs; however, the quality of the material produced is limited by defects formed during the growth process. A very useful nondestructive technique that can be utilized to probe defects in semiconductors is the room-temperature photoluminescence (PL) quantum yield (QY). It was recently demonstrated that a PL QY near 100% can be obtained in MoS₂ and WS₂ monolayers prepared by micromechanical exfoliation by treating samples with an organic superacid: bis(trifluoromethane)sulfonimide (TFSI). Here we have performed a thorough exploration of this chemical treatment on CVD-grown MoS₂ samples. We find that the as-grown monolayers must be transferred to a secondary substrate, which releases strain, to obtain high QY by TFSI treatment. Furthermore, we find that the sulfur precursor temperature during synthesis of the MoS₂ plays a critical role in the effectiveness of the treatment. By satisfying the aforementioned conditions we show that the PL QY of CVD-grown monolayers can be improved from ∼0.1% in the as-grown case to ∼30% after treatment, with enhancement factors ranging from 100 to 1500× depending on the initial monolayer quality. We also found that after TFSI treatment the PL emission from MoS₂ films was visible by eye despite the low absorption (5–10%). The discovery of an effective passivation strategy will speed the development of scalable high-performance optoelectronic and electronic devices based on MoS₂.

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Autor(es)

Amani, Matin -  Burke, Robert A. -  Zhao, Peida -  Lien, Der -  Hsien -  Taheri, Peyman -  Ahn, Geun Ho -  Kirya, Daisuke -  Ager, Joel W. -  Yablonovitch, Eli -  Dubey, Madan -  Javey, Ali -  Ji, Xiang -  Kong, Jing - 

Id.: 70070837

Idioma: inglés (Estados Unidos)  - 

Versión: 1.0

Estado: Final

Tipo de recurso: Article  -  http://purl.org/eprint/type/JournalArticle  - 

Tipo de Interactividad: Expositivo

Nivel de Interactividad: muy bajo

Audiencia: Estudiante  -  Profesor  -  Autor  - 

Estructura: Atomic

Coste: no

Copyright: sí

: Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.

Requerimientos técnicos:  Browser: Any - 

Relación: [IsBasedOn] Other repository
[References] http://dx.doi.org/10.1021/acsnano.6b03443
[References] ACS Nano

Fecha de contribución: 03-sep-2017

Contacto:

Localización:
* 1936-0851
* 1936-086X
* PUBLISHER_POLICY

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