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Descripción

Silicon nitride as a gate dielectric can improve the performance of ULSI CMOS devices by decreasing the gate leakage currents. In this paper we report a a-SiN:H gate dielectric fabricated using Cat-CVD at a relatively low substrate temperature of ∼250°C, using silane and ammonia as the source gases. The films were deposited at various gas pressures, (NH3/SiH4) flow rate ratios and at different filament temperatures (TF). The deposition parameters, i.e. total gas pressure and gas composition (silane+ammonia) were optimized to deposit insulating and transparent films with high breakdown strength. The structural properties of these films were studied by Fourier transform infrared (FTIR) spectroscopy and ultraviolet-visible (UV-vis) spectroscopy. Films with bandgap as high as 5.5 eV were obtained. The optimized conditions were used to deposit ultrathin films of the order of 8 nm thickness for deep-submicron CMOS technology. Electrical properties such as C–V and I–V measurements were studied on metal–nitride–semiconductor (MNS) capacitor structures. These characterization results on MNS capacitors show breakdown fields of the order of 10 MV cm−1 and good interface properties.

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Autor(es)

Patil, Samadhan B. -  Kumbhar, Alka -  Waghmare, Parag -  Ramgopal Rao, V. -  Dusane, R.O - 

Id.: 70840416

Versión: 1.0

Estado: Final

Tipo de recurso: Articles  -  PeerReviewed  - 

Tipo de Interactividad: Expositivo

Nivel de Interactividad: muy bajo

Audiencia: Estudiante  -  Profesor  -  Autor  - 

Estructura: Atomic

Coste: no

Copyright: sí

Requerimientos técnicos:  Browser: Any - 

Relación: [References] http://eprints.gla.ac.uk/154906/
[References] 10.1016/S0040-6090(01)01281-0

Fecha de contribución: 23-ene-2018

Contacto:

Localización:
* Patil, S. B. , Kumbhar, A., Waghmare, P., Ramgopal Rao, V. and Dusane, R.O. (2001) Low temperature silicon nitride deposited by Cat-CVD for deep sub-micron metal–oxide–semiconductor devices. Thin Solid Films , 395(1-2), pp. 270-274. (doi:10.1016/S0040-6090(01)01281-0 )

Otros recursos del mismo autor(es)

  1. Low Temperature Hot-Wire CVD Nitrides for Deep Sub-Micron CMOS Technologies No abstract available.
  2. Photoluminescent, wide-bandgap a-SiC:H alloy films deposited by Cat-CVD using acetylene Hydrogenated amorphous silicon/carbon films (a-Si-C:H) are deposited from a silane and acetylene gas...
  3. Improvement in Gate Dielectric Quality of Ultra Thin a: SiN:H MNS Capacitor by Hydrogen Etching of the Substrate To extend the scaling limit of thermal SiO2, in the ultra thin regime when the direct tunneling curr...
  4. Gas Phase Chemistry Study During Deposition of a-Si: H and μc-Si: H Films by HWCVD using Quadrupole Mass Spectrometry Amorphous and microcrystalline silicon films were deposited by HWCVD under different deposition cond...
  5. Reliability Issues of Ultra Thin Silicon Nitride (a-SiN: H) by Hot Wire CVD for Deep Sub-Micron CMOS Technologies The reliability of gate dielectric is of high importance, especially as its thickness is reaching at...

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