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Detalles del recurso


The reliability of gate dielectric is of high importance, especially as its thickness is reaching atomic dimensions. The gate leakage currents and the operating fields can be very high in devices with these ultra thin gate dielectrics. Several anomalous degradation mechanisms and breakdown characteristics are observed in these devices. New phenomena such as quasi breakdown and SILC are now considered important for accurate reliability assessment In this work we investigate a systematic reliability evaluation of high quality MNS devices made with ultra thin HWCVD nitride as the gate dielectric by taking into account these newer effects.

Pertenece a



Waghmare, P.C. -  Patil, S.B. -  Kumbhar, A. -  Dusane, R.O. -  Rao, V.R. - 

Id.: 70835499

Versión: 1.0

Estado: Final

Tipo de recurso: Conference Proceedings  -  PeerReviewed  - 

Tipo de Interactividad: Expositivo

Nivel de Interactividad: muy bajo

Audiencia: Estudiante  -  Profesor  -  Autor  - 

Estructura: Atomic

Coste: no

Copyright: sí

Requerimientos técnicos:  Browser: Any - 

Relación: [References] http://eprints.gla.ac.uk/154815/

Fecha de contribución: 23-ene-2018


* Waghmare, P.C., Patil, S.B. , Kumbhar, A., Dusane, R.O. and Rao, V.R. (2002) Reliability Issues of Ultra Thin Silicon Nitride (a-SiN: H) by Hot Wire CVD for Deep Sub-Micron CMOS Technologies. In: Eleventh International Workshop on the Physics of Semiconductor Devices, Delhi, India, 11-15 Dec 2001, ISBN 9780819445001

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  1. Low Temperature Hot-Wire CVD Nitrides for Deep Sub-Micron CMOS Technologies No abstract available.
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  3. Low temperature silicon nitride deposited by Cat-CVD for deep sub-micron metal–oxide–semiconductor devices Silicon nitride as a gate dielectric can improve the performance of ULSI CMOS devices by decreasing ...
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  5. Ultra-thin silicon nitride by hot wire chemical vapor deposition (HWCVD) for deep sub-micron CMOS technologies Silicon nitride is considered a promising candidate to replace thermal oxide dielectrics, as the lat...

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