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Study Of Transport Behaviour Of P-GaAs/N-GaAs EPI-Junctions

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Detalles del recurso

Pertenece a: ETD at Indian Institute of Science  

Descripción:

Autor(es): Mahajan, Sonia - 

Id.: 55231161

Idioma: English (United States)  - 

Versión: 1.0

Estado: Final

Palabras claveGallium Semiconductors - 

Tipo de recurso: Thesis  - 

Tipo de Interactividad: Expositivo

Nivel de Interactividad: muy bajo

Audiencia: Estudiante  -  Profesor  -  Autor  - 

Estructura: Atomic

Coste: no

Copyright: sí

Requerimientos técnicos:  Browser: Any - 

Relación: [References] G15456

Fecha de contribución: 01-may-2012

Contacto:

Localización:


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