Study Of Transport Behaviour Of P Gaas N Gaas Epi Junctions

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Study Of Transport Behaviour Of P-GaAs/N-GaAs EPI-Junctions

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Detalles del recurso

Pertenece a: ETD at Indian Institute of Science

Descripción:

Autor(es): Mahajan, Sonia -

Id.: 55231161

Idioma: inglés (Estados Unidos) -

Versión: 1.0

Estado: Final

Palabras clave: Gallium Semiconductors -

Tipo de recurso: Thesis -

Tipo de Interactividad: Expositivo

Nivel de Interactividad: muy bajo

Audiencia: Estudiante - Profesor - Autor -

Estructura: Atomic

Coste: no

Copyright: sí

Requerimientos técnicos: Browser: Any -

Relación: [References] G15456

Fecha de contribución: 01-may-2012

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