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Detalles del recurso


Silicon nitride is considered a promising candidate to replace thermal oxide dielectrics, as the latter is reaching its scaling limits due to the excessive increase in the gate tunneling leakage current. The novel hot wire chemical vapor deposition (HWCVD) technique shows promise for gate quality silicon nitride film yields at 250 °C while maintaining their primary advantage of a higher dielectric constant of 7.1. In this paper we report the results of our efforts towards developing ultra-thin HWCVD silicon nitride as an advanced gate dielectric for the replacement of thermal gate oxides in future generations of ultra large scale integration (ULSI) devices.

Pertenece a



Waghmare, Parag C. -  Patil, Samadhan B. -  Kumbhar, Alka -  Dusane, R.O. -  Rao, V.Ramgopal - 

Id.: 70835498

Versión: 1.0

Estado: Final

Tipo de recurso: Articles  -  PeerReviewed  - 

Tipo de Interactividad: Expositivo

Nivel de Interactividad: muy bajo

Audiencia: Estudiante  -  Profesor  -  Autor  - 

Estructura: Atomic

Coste: no

Copyright: sí

Requerimientos técnicos:  Browser: Any - 

Relación: [References] http://eprints.gla.ac.uk/154811/
[References] 10.1016/S0167-9317(02)00575-0

Fecha de contribución: 23-ene-2018


* Waghmare, P. C., Patil, S. B. , Kumbhar, A., Dusane, R.O. and Rao, V.R. (2002) Ultra-thin silicon nitride by hot wire chemical vapor deposition (HWCVD) for deep sub-micron CMOS technologies. Microelectronic Engineering , 61-62, pp. 625-629. (doi:10.1016/S0167-9317(02)00575-0 )

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