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Descripción

Silicon nitride is considered a promising candidate to replace thermal oxide dielectrics, as the latter is reaching its scaling limits due to the excessive increase in the gate tunneling leakage current. The novel hot wire chemical vapor deposition (HWCVD) technique shows promise for gate quality silicon nitride film yields at 250 °C while maintaining their primary advantage of a higher dielectric constant of 7.1. In this paper we report the results of our efforts towards developing ultra-thin HWCVD silicon nitride as an advanced gate dielectric for the replacement of thermal gate oxides in future generations of ultra large scale integration (ULSI) devices.

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Autor(es)

Waghmare, Parag C. -  Patil, Samadhan B. -  Kumbhar, Alka -  Dusane, R.O. -  Rao, V.Ramgopal - 

Id.: 70835498

Versión: 1.0

Estado: Final

Tipo de recurso: Articles  -  PeerReviewed  - 

Tipo de Interactividad: Expositivo

Nivel de Interactividad: muy bajo

Audiencia: Estudiante  -  Profesor  -  Autor  - 

Estructura: Atomic

Coste: no

Copyright: sí

Requerimientos técnicos:  Browser: Any - 

Relación: [References] http://eprints.gla.ac.uk/154811/
[References] 10.1016/S0167-9317(02)00575-0

Fecha de contribución: 23-ene-2018

Contacto:

Localización:
* Waghmare, P. C., Patil, S. B. , Kumbhar, A., Dusane, R.O. and Rao, V.R. (2002) Ultra-thin silicon nitride by hot wire chemical vapor deposition (HWCVD) for deep sub-micron CMOS technologies. Microelectronic Engineering , 61-62, pp. 625-629. (doi:10.1016/S0167-9317(02)00575-0 )

Otros recursos del mismo autor(es)

  1. Low Temperature Hot-Wire CVD Nitrides for Deep Sub-Micron CMOS Technologies No abstract available.
  2. Photoluminescent, wide-bandgap a-SiC:H alloy films deposited by Cat-CVD using acetylene Hydrogenated amorphous silicon/carbon films (a-Si-C:H) are deposited from a silane and acetylene gas...
  3. Low temperature silicon nitride deposited by Cat-CVD for deep sub-micron metal–oxide–semiconductor devices Silicon nitride as a gate dielectric can improve the performance of ULSI CMOS devices by decreasing ...
  4. Improvement in Gate Dielectric Quality of Ultra Thin a: SiN:H MNS Capacitor by Hydrogen Etching of the Substrate To extend the scaling limit of thermal SiO2, in the ultra thin regime when the direct tunneling curr...
  5. Gas Phase Chemistry Study During Deposition of a-Si: H and μc-Si: H Films by HWCVD using Quadrupole Mass Spectrometry Amorphous and microcrystalline silicon films were deposited by HWCVD under different deposition cond...

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