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In weakly coupled, current biased, doped semiconductor superlattices. domain walls may move upstream against the flow of electrons. For appropriate doping values, a domain wall separating two electric-field domains moves downstream below a first critical current, it remains stationary between this value and a second critical current, and then moves upstream above. These conclusions are reached by using a comparison principle to analyze a discrete drift-diffusion model, and validated by numerical simulations. Possible experimental realizations are suggested.

Pertenece a



Carpio Rodríguez, Ana María -  Bonilla, L.L. -  Wacker, A. -  Schöll, E. - 

Id.: 55259249

Idioma: inglés  - 

Versión: 1.0

Estado: Final

Tipo:  application/pdf - 

Palabras claveFísica matemática - 

Tipo de recurso: info:eu-repo/semantics/article  -  PeerReviewed  - 

Tipo de Interactividad: Expositivo

Nivel de Interactividad: muy bajo

Audiencia: Estudiante  -  Profesor  -  Autor  - 

Estructura: Atomic

Coste: no

Copyright: sí

: info:eu-repo/semantics/openAccess

Formatos:  application/pdf - 

Requerimientos técnicos:  Browser: Any - 

Relación: [References] http://eprints.ucm.es/15104/
[References] http://journals.aps.org/pre/pdf/10.1103/PhysRevE.61.4866
[References] http://dx.doi.org10.1103/PhysRevE.61.4866
[References] PB98-0142-C04-01
[References] ERB FMRX-CT96-0033

Fecha de contribución: 23-abr-2015



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