Wave Fronts May Move Upstream In Semiconductor Superlattices

Wave fronts may move upstream in semiconductor superlattices

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Descripción

In weakly coupled, current biased, doped semiconductor superlattices. domain walls may move upstream against the flow of electrons. For appropriate doping values, a domain wall separating two electric-field domains moves downstream below a first critical current, it remains stationary between this value and a second critical current, and then moves upstream above. These conclusions are reached by using a comparison principle to analyze a discrete drift-diffusion model, and validated by numerical simulations. Possible experimental realizations are suggested.

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Autor(es)

Carpio, Ana - Bonilla, L.L. - Wacker, A. - Schöll, E. -

Id.: 55259249

Idioma: inglés -

Versión: 1.0

Estado: Final

Tipo: application/pdf -

Palabras clave: Física matemática -

Tipo de recurso: info:eu-repo/semantics/article - PeerReviewed -

Tipo de Interactividad: Expositivo

Nivel de Interactividad: muy bajo

Audiencia: Estudiante - Profesor - Autor -

Estructura: Atomic

Coste: no

Copyright: sí

: info:eu-repo/semantics/openAccess

Formatos: application/pdf -

Requerimientos técnicos: Browser: Any -

Relación: [References] http://eprints.ucm.es/15104/
[References] http://journals.aps.org/pre/pdf/10.1103/PhysRevE.61.4866
[References] http://dx.doi.org10.1103/PhysRevE.61.4866
[References] PB98-0142-C04-01
[References] ERB FMRX-CT96-0033

Fecha de contribución: 29-oct-2016

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