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rss_1.0 Recursos de colección

UCL University College London Eprints (331,853 recursos)
UCL Eprints collects the work of UCL researchers and makes it freely available over the web, helping the worldwide scholarly community to discover UCL research. Institutional repositories like UCL Eprints complement the traditional academic publishing and scholarly communications processes. They raise the visibility of research and help to maximise its impact. UCL researchers are encouraged to deposit a copy of each journal article, conference paper, working paper, and any other research output, in the UCL Eprints at the earliest opportunity, ensuring that their research reaches as wide an audience as possible.

Mostrando recursos 61 - 80 de 331,410

61. Raman spectroscopy of pentanary GaInAsSbP narrow gap alloys lattice matched to InAs and GaSb - Cheetham, KJ; Carrington, PJ; Krier, A; Patel, II; Martin, FL

62. Type II GaSb/GaAs quantum dot/ring stacks with extended photoresponse for efficient solar cells - Carrington, PJ; Mahajumi, AS; Wagener, MC; Botha, JR; Zhuang, Q; Krier, A

63. Low bandgap GaInAsSbP pentanary thermophotovoltaic diodes - Cheetham, KJ; Carrington, PJ; Cook, NB; Krier, A

64. MBE growth and characterization of dilute nitrides for mid-infrared optoelectronic devices - de La Mare, M; Krier, A; Zhuang, Q; Carrington, PJ; Patane, A

65. Midinfrared InAsSbN/InAs Multiquantum Well Light-Emitting Diodes - Carrington, PJ; de la Mare, M; Cheetham, KJ; Zhuang, Q; Krier, A

66. Low Bandgap GaInAsSbP Pentanary Thermophotovoltaic cells - Carrington, PJ; Krier, A; Cheetham, KJ; Cook, NB; Yin, M

67. Photoluminescence of InAs0. 926Sb0. 063N0. 011/InAs multi-quantum wells in the mid-infrared spectral range - de La Mare, M; Carrington, PJ; Wheatley, R; Zhuang, Q; Beanland, R; Sanchez, AM; Krier, A

68. InSb quantum dot LEDs grown by molecular beam epitaxy for mid-infrared applications - Carrington, PJ; Solov ev, VA; Zhuang, Q; Ivanov, SV; Krier, A

69. Midinfrared GaInSb/AlGaInSb quantum well laser diodes operating above 200 K - Nash, GR; Przeslak, SJB; Smith, SJ; de Valicourt, G; Andreev, AD; Carrington, PJ; Yin, M; Krier, A; Coomber, SD; Buckle, L; others,

70. LASERS, OPTICS, AND OPTOELECTRONICS - Khurgin, JB; Dikmelik, Y; Liu, PQ; Hoffman, AJ; Escarra, MD; Franz, KJ; Gmachl, CF; Wang, XL; Furue, S; Ogura, M; others,

71. Quantum nanostructures grown by molecular beam epitaxy for mid-infrared applications - Carrington, PJ

72. Temperature dependence of mid-infrared electroluminescence in type II InAsSb/InAs multi-quantum well light-emitting diodes - Carrington, PJ; Zhuang, Q; Yin, M; Krier, A

73. Diode lasers for free space optical communications based on InAsSb/InAsSbP grown by LPE - Yin, M; Krier, A; Carrington, PJ; Jones, R; Krier, SE

74. GaInSb/AlInSb multi-quantum-wells for mid-infrared lasers - Yin, M; Nash, GR; Coomber, SD; Buckle, L; Carrington, PJ; Krier, A; Andreev, A; Przeslak, SJB; de Valicourt, G; Smith, SJ; others,

75. Growth optimization of self-organized InSb/InAs quantum dots - Zhuang, Q; Carrington, PJ; Krier, A

76. InSb/InAs Nanostructures Grown by Molecular Beam Epitaxy Using Sb2 and As2 Fluxes - Solov ev, VA; Carrington, P; Zhuang, Q; Lai, KT; Haywood, SK; Ivanov, SV; Krier, A

77. LASERS, OPTICS, AND OPTOELECTRONICS - Carrington, PJ; Solov ev, VA; Zhuang, Q; Krier, A; Ivanov, SV; Liu, T; Qin, J; Zhang, G; Zhu, T; Niu, F; others,

78. Room temperature midinfrared electroluminescence from InSb/InAs quantum dot light emitting diodes - Carrington, PJ; Solov ev, VA; Zhuang, Q; Krier, A; Ivanov, SV

79. The development of room temperature LEDs and lasers for the mid-infrared spectral range - Krier, A; Yin, M; Smirnov, V; Batty, P; Carrington, PJ; Solovev, V; Sherstnev, V

80. Type II InSb/InAs quantum dot structures grown by molecular beam epitaxy using Sb 2 and As 2 fluxes (Invited Paper)[6900-16] - Carrington, PJ; Solov ev, VA; Zhuang, Q; Ivanov, SV; Krier, A

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