HKUST Institutional Repository
(5.016 recursos)
Repository of Hong Kong University of Science and Technology. Managed by the HKUST Library.
Mostrando recursos 1 - 7 de 7
1.
Inspection method for comparison of articles - Goonetilleke, Ravindra S.
Two articles are compared to detect differences by forming images of the two articles and then viewing said images in respective eyes. This forms a superimposed image and any differences between the two articles are visible as a three-dimensional element to the image by the stereoscopic effect. The method may be used to compare a product with a master to detect any errors, or may for example be used to compare fingerprints or for DNA matching. Three dimensional or remote articles can likewise be compared by viewing and comparing camera-caught images of the articles rather than the articles themselves.
2.
Field emission display having elongate emitter structures - Sin, Johnny K. O.; Wang, Bao-Ping
Field emitter structures are described for use in arrays forming field emission displays. The field emitter structures may be either single or perferably double-gate structures. To enhance the field emission current density the emitters are formed so as to be elongate so as to form a race-track shape. The emitter layer may also be provided with sharply defined edges in order to improve electron emission.
3.
High speed data transmission using expanded bit durations in multiple parallel coded data streams - Ben Letaief, Khaled; Chuang, Justin C.; Murch, Ross David
High-rate bit transmitted data is serial to parallel converted into low-rate bit streams in a similar fashion to multicarrier or multitone modulation. However, in contrast to the multicarrier method, each low-rate bit stream is modulated using direct-sequence spread-spectrum. By selecting the processing gain properly the total required bandwidth will be of the same order as the original high-rate data stream, thereby gaining the inherent benefit or multipath rejection without expanding the bandwidth of the original high-rate stream.
4.
Subharmonic quadrature sampling receiver and design - Lam, Marcos Chun-Wing; Ling, Curtis C.
A receiver for down-converting a modulated carrier into its in-phase (I) and quadrature (Q) components for further processing is proposed. This is accomplished using a sampling method in which the signal is sampled directly using a sampling circuit which is driven by a single sampling clock frequency sbstantially lower than the carrier frequency while allowing the I and Q components to be precisely obtained. Each of the signal samples comprises sub-samples taken successively which represent the in-phase, quadrature negative in-phase and negative quadrature components of the signal. The negative components permit flexible application of the invention in several modes, including...
5.
Liquid crystal display having a single polarizer and no retardation film compensation - Kwok, Hoi-Sing; Yu, Fei-Hong
The invention provides a reflective liquid crystal display which consists of just an input polarizer, the liquid crystal cell and a rear reflector which can be placed inside or outside of the liquid crystal cell. There is no rear polarizer and no retardation film compensation. The invention is capable of producing a high contrast, low chromatic dispersion display. Depending on the twist angle chosen for the liquid crystal cell, the display can be used in direct view or in a projection type display. The display can also be driven in an active matrix mode or in a passive matrix multiplexed...
6.
Polysilicon devices and a method for fabrication thereof - Sin, Johnny K. O.; Kottarath Parambil, Anish Kumar
The present invention provides a novel thin film transistor device having the advantages of both conventional thin and thick film devices. The channel region of the device is elevated with respect to the source and drain regions by being made as a thin film while the source and drain regions are relatively thick. Such an arrangement provides high drive current characteristics of a thin film device, whilst mitigating the disadvantageous kink effect in the IV curve and the off-state leakage current known in conventional thin film devices. The invention also provides a fabrication method, and this method may also be...
7.
Thin film transistor - Sin, Johnny K. O.; Kottarath Parambil, Anish Kumar
A thin film transistor (TFT) comprises a n+ source region and a p+ drain separated by an undoped offset region, or the complementary structure with a p+ source and a n+ drain. By means of this arrangement in the offset region is conduction is by way of both electron and hole carriers and the offset region is conductivity modulated. The TFT of the present invention has lower on-resistance than a conventional thin film transistor.
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