Hokkaido University Collection of Scholarly and Academic Papers (53.434 recursos) HUSCAP (Hokkaido University Collection of Scholarly and Academic Papers) contains peer-reviewed journal articles, proceedings, educational resources and any kind of scholarly works of Hokkaido University.
5. Effect of near-threshold ionization on electron attachment in gaseous dielectrics - Sugawara, Hirotake; Ishigaki, Takuya; Hirochi, Yuuki; Sakai, Yosuke; ??, ?? It has been predicted that near-threshold ionization (NTI) in a gaseous dielectric inhibits the development of electron avalanche when the gaseous dielectric has a sufficient capability for low-energy electron attachment.
6. Predicting the amount of carbon in carbon nanotubes grown by CH4 rf plasmas - Okita, Atsushi; Suda, Yoshiyuki; Ozeki, Atsushi; Sugawara, Hirotake; Sakai, Yosuke; ??, ?? Carbon nanotubes (CNTs) were grown on Si substrates by rf CH4 plasma-enhanced chemical vapor deposition in a pressure range of 1–10 Torr, and then characterized by scanning electron microscopy.
8. A subthreshold MOS neuron circuit based on the Volterra system - Asai, Tetsuya; Kanazawa, Yusuke; Amemiya, Yoshihito; ??, ?? We present an analog neuron circuit consisting of a small number of metal-oxide semiconductor (MOS) devices operating in their subthreshold region.
9. Analog integrated circuits for the Lotka-Volterra competitive neural networks - Asai, Tetsuya; Ohtani, Masashiro; Yonezu, Hiroo; ??, ?? A subthreshold MOS integrated circuit (IC) is designed and fabricated for implementing a competitive neural network of the Lotka-Volterra (LV) type which is derived from conventional membrane dynamics of neurons and is used for the selection of external inputs.
11. Proposal and analysis of a ferromagnetic triple-barrier resonant-tunneling spin filter - Uemura, T; Marukame, T; Yamamoto, M; ??, ?? A novel spin filter consisting of a triple-barrier resonant tunneling system in the form F/I/N/I/F/I/F is proposed, where F, I, and N represent a ferromagnetic material, an insulator, and a nonmagnetic material, respectively.
20. Properties of electron swarms in gases in the upstream region of an electron source - Sugawara, H.; Sakai, Y.; Tagashira, H. Exponential spatial growth of electron swarms in gases under steady-stateTownsend conditions may be observed not only in the downstream region of an electronsource but also in the upstream region due to backward diffusion.