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Hokkaido University Collection of Scholarly and Academic Papers (53,929 recursos)
HUSCAP (Hokkaido University Collection of Scholarly and Academic Papers) contains peer-reviewed journal articles, proceedings, educational resources and any kind of scholarly works of Hokkaido University.

Mostrando recursos 21 - 40 de 48

21. Conductance measurements of nanoscale regions with in situ transmission electron microscopy - Arita, Masashi; Hirose, Ryusuke; Hamada, Kouichi; Takahashi, Yasuo
Conductance measurements of nanostructures with simultaneous transmission electron microscopy (TEM) were performed on thin insulating SrF2 films (3 nm thick) and Fe-SrF2 granular films (10 nm thick) deposited on tip-shaped An electrodes.

22. Fabrication and Characterization of InGaAs/InAlAs Insulated Gate Pseudomorphic HENTs Having a Silicon Interface Control Layer - XIE, Yong-Gui; KASAI, Seiya; TAKAHASHI, Hiroshi; JIANG, Chao; HASEGAWA, Hideki
A novel InGaAs/InAlAs insulated gate (IG) pseudomorphic high electron mobility transistor (PHEMT) having a silicon interface control layer (Si ICL) is successfully fabricated and characterized.

23. Hexagonal Binary Decision Diagram Quantum Circuit Approach for Ultra-Low Power III-V Quantum LSIs - HASEGAWA, Hideki; KASAI, Seiya; SATO, Taketomo
A new approach for ultra-low-power LSIs based on quantum devices is presented and its present status and critical issues are discussed with a brief background review on the semiconductor nanotechnology.

24. Experimental realization of a ballistic spin interferometer based on the Rashba effect using a nanolithographically defined square loop array - Koga, Takaaki; Sekine, Yoshiaki; Nitta, Junsaku
We succeeded in observing gate-controlled electron spin interference in nanolithographically defined square loop arrays that were fabricated in In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As quantum wells (QWs).

25. Hexagonal ferromagnetic MnAs nanocluster formation on GaInAs?InP (111)B layers by metal-organic vapor phase epitaxy - Hara, Shinjiroh; Fukui, Takashi
The ferromagnetic behavior of the nanoclusters dominates the magnetic response of the samples when magnetic fields are applied in a direction parallel to the wafer plane.

26. Spin-orbit induced interference of ballistic electrons in polygon structures - Veenhuizen, Marc J. van; Koga, Takaaki; Nitta, Junsaku
We investigate the spin-orbit induced spin-interference pattern of ballistic electrons traveling along any regular polygon.

27. Competition between spin-orbit interaction and Zeeman coupling in Rashba two-dimensional electron gases - Meijer, F. E.; Morpurgo, A. F.; Klapwijk, T. M.; Koga, T.; Nitta, J.
We systematically investigate how the interplay between the Rashba spin-orbit interaction and Zeeman coupling affects the electron transport and the spin dynamics in InGaAs-based 2D electron gases.

28. Ballistic spin interferometer using the Rashba effect - Koga, Takaaki; Nitta, Junsaku; Veenhuizen, Marc van
We propose a ballistic spin interferometer using a square loop (SL) geometry, where an incident electron wave packet is split into a pair of partial waves by a "hypothetical" beam splitter.

29. Statistical significance of the fine structure in the frequency spectrum of Aharonov-Bohm conductance oscillations - Meijer, F. E.; Morpurgo, A. F.; Klapwijk, T. M.; Koga, T.; Nitta, J.
Measurements performed at different values of gate voltage are used to calculate the ensemble-averaged modulus of the Fourier spectrum and, at each frequency, the standard deviation associated to the average.

30. Gate-controlled electron g factor in an InAs-inserted-channel In 0.53Ga 0.47As/In 0.52Al 0.48As heterostructure - Nitta, Junsaku; Lin, Yiping; Akazaki, Tatsushi; Koga, Takaaki
The electron g factor in an InAs-inserted-channel In0.53Ga0.47As/In0.52Al0.48As heterostructure is studied by measuring the angle dependence of magnetotransport properties.

31. Rashba Spin-Orbit Coupling Probed by the Weak Antilocalization Analysis in InAlAs/InGaAs/InAlAs Quantum Wells as a Function of Quantum Well Asymmetry - Koga, Takaaki; Nitta, Junsaku; Akazaki, Tatsushi; Takayanagi, Hideaki
We have investigated the values of the Rashba spin-orbit coupling constant .

32. Thermoelectric figure of merit of Bi/Pb_{1-x}Eu_{x}Te superlattices - Koga, T.; Rabin, O.; Dresselhaus, M. S.
An enhanced thermoelectric figure of merit Z_{3D}T is predicted for Bi/(111)Pb_{1-x}Eu_{x}Te superlattices.

33. Mechanism of the enhanced thermoelectric power in (111)-oriented n-type PbTe/Pb_{1-x}Eu_{x}Te multiple quantum wells - Koga, T.; Harman, T. C.; Cronin, S. B.; Dresselhaus, M. S.
A theoretical investigation of the recently observed enhanced thermoelectric power S in (111)-oriented n-type PbTe/Pb1-xEuxTe multiple-quantum-wells (x?0.09) has been carried out, including both longitudinal acoustic phonon deformation potential scattering and polar optical phonon scattering of the two-dimensionally confined electrons in the quantum wells.

34. Spin-Filter Device Based on the Rashba Effect Using a Nonmagnetic Resonant Tunneling Diode - Koga, Takaaki; Nitta, Junsaku; Takayanagi, Hideaki; Datta, Supriyo
We propose an electronic spin-filter device that uses a nonmagnetic triple barrier resonant tunneling diode (TB-RTD).

35. Spin-dependent tunneling characteristics of fully epitaxial magnetic tunneling junctions with a full-Heusler alloy Co[sub 2]MnSi thin film and a MgO tunnel barrier - Ishikawa, T.; Marukame, T.; Kijima, H.; Matsuda, K.-I.; Uemura, T.; Arita, M.; Yamamoto, M.
Fully epitaxial, exchange-biased magnetic tunnel junctions (MTJs) were fabricated with a Co-based full-Heusler alloy Co2MnSi (CMS) thin film as a lower electrode, a MgO tunnel barrier, and a Co50Fe50 upper electrode.

36. Spiking neuron devices consisting of single-flux-quantum circuits - Hirose, Tetsuya; Asai, Tetsuya; Amemiya, Yoshihito
Single-flux-quantum (SFQ) circuits can be used for making spiking neuron devices, which are useful elements for constructing intelligent, brain-like computers.

37. Epitaxial growth of Co2Cr0.6Fe0.4Al Heusler alloy thin films on MgO (001) substrates by magnetron sputtering - Matsuda, Ken-ichi; Kasahara, Takashi; Marukame, Takao; Uemura, Tetsuya; Yamamoto, Masafumi; ??, ??
We demonstrate that single-crystalline epitaxial films of the Heusler alloy Co2Cr0.6Fe0.4Al (CCFA) featuring excellent surface flatness can be grown on MgO (001) substrates by magnetron sputtering deposition at room temperature and subsequent annealing at high temperatures.

38. Highly Spin-Polarized Tunneling in Fully Epitaxial Magnetic Tunnel Junctions Using Full-Heusler Alloy Co2Cr0.6Fe0.4Al Thin Film and MgO Tunnel Barrier - Marukame, T.; Ishikawa, T.; Sekine, W.; Matsuda, K.; Uemura, T.; Yamamoto, M.
Highly spin-polarized tunneling with tunnel magnetoresistance (TMR) ratios of 90% at room temperature and 240% at 4.2 K was demonstrated for fully epitaxial magnetic tunnel junctions fabricated using a cobalt-based full-Heusler alloy Co2Cr0.6Fe0.4Al (CCFA) thin film having a composition close to the stoichiometric one and a MgO tunnel barrier.

39. Exchange Bias Effect in Full-Heusler Alloy Co2Cr0.6Fe0.4Al Epitaxial Thin Films - Ishikawa, T.; Marukame, T.; Matsuda, K.-I.; Uemura, T.; Yamamoto, M.
We fabricated trilayer structures consisting of a Co-based full-Heusler alloy Co2Cr0.6Fe0.4Al (CCFA) layer, a Ru ultrathin film, and a Co90Fe10 layer, and demonstrated well-established antiferromagnetic coupling in the fabricated structures.

40. Highly spin-polarized tunneling in fully epitaxial Co2Cr0.6Fe0.4Al/MgO/Co50Fe50 magnetic tunnel junctions with exchange biasing - Marukame, Takao; Ishikawa, Takayuki; Hakamata, Shinya; Matsuda, Ken-ichi; Uemura, Tetsuya; Yamamoto, Masafumi
Fully epitaxial magnetic tunnel junctions (MTJs) with exchange biasing were fabricated with a full-Heusler alloy Co2Cr0.6Fe0.4Al (CCFA) thin film and a MgO tunnel barrier, where a Co50Fe50 upper electrode was used in a synthetic ferrimagnetic Co50Fe50/Ru/Co90Fe10 trilayer exchange-biased with an IrMn layer through the Co90Fe10/IrMn interface.

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