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Hokkaido University Collection of Scholarly and Academic Papers (54,094 recursos)
HUSCAP (Hokkaido University Collection of Scholarly and Academic Papers) contains peer-reviewed journal articles, proceedings, educational resources and any kind of scholarly works of Hokkaido University.

Mostrando recursos 41 - 48 de 48

41. High-repetition-rate (6 kHz) and long-pulse-duration (50 ns) ArF excimer laser for sub-65 nm lithography - Kakizaki, Koji; Sasaki, Yoichi; Inoue, Toyoharu; Sakai, Yosuke
Development of high-repetition-rate ArF excimer lasers is vital requirement for achieving high throughput and high energy-dose stability in a scanner system.

42. Deposition of fine carbon particles using pulsed ArF laser ablation assisted by inductively coupled plasma - Suda, Yoshiyuki; Nishimura, T; Ono, T; Akazawa, M; Sakai, Y; Homma, N; ??, ??
Carbon thin films containing many fine carbon particles were deposited by a pulsed ArF laser ablation technique assisted by inductively coupled plasma (ICP).

43. Behaviour of liquid nitrogen between electrodes in a microgravity environment - Suda, Yoshiyuki; Itoh, M; Sakai, Y; Matsuura, K; Honma, N; Kimura, T; ??, ??
The motion of boiling liquid nitrogen (LN2) between electrodes and its surface profile in a microgravity environment just after release from terrestrial gravity are observed.

44. Preparation of double layer film of boron and carbon by pulsed laser deposition - Suda, Yoshiyuki; Suganuma, Y; Sakai, Y; Suzuki, K; Tsujino, J; Homma, N; ??, ??
Double layer films of boron and carbon were prepared by pulsed laser deposition (PLD) on silicon substrates.

45. Preparation of carbon nanoparticles by plasma-assisted pulsed laser deposition method : size and binding energy dependence on ambient gas pressure and plasma condition - Suda, Yoshiyuki; Ono, T; Akazawa, M; Sakai, Y; Tsujino, J; Homma, N; ??, ??
Nanometer-size carbon particles were prepared on a Si substrate using pulsed laser deposition (PLD) assisted by radio frequency (RF) Ar plasma and were compared with ones prepared by PLD in vacuum and Ar gas.

46. Effect of an InP/In_{0.53}Ga_{0.47}As interface on spin-orbit interaction in In_{0.52}Al_{0.48}As/In_{0.53}Ga_{0.47}As heterostructures - Lin, Yiping; Koga, Takaaki; Nitta, Junsaku
We report the effect of the insertion of an InP/In0.53Ga47As Interface on the Rashba spin-orbit interaction in In0.52Al0.48As/In0.53Ga0.47As quantum wells.

47. Carrier pocket engineering applied to "strained" Si/Ge superlattices to design useful thermoelectric materials - Koga, T.; Sun, X.; Cronin, S. B.; Dresselhaus, M. S.
The concept of carrier pocket engineering is applied to strained Si/Ge superlattices to obtain a large thermoelectric figure of merit ZT.

48. Epitaxial Growth of Full-Heusler Alloy Co2MnSi Thin Films on MgO-Buffered MgO Substrates - Kijima, H.; Ishikawa, T.; Marukame, T.; Koyama, H.; Matsuda, K.; Uemura, T.; Yamamoto, M.
Full-Heusler alloy Co?MnSi (CMS) thin films were epitaxially grown on MgO-buffered MgO substrates through magnetron sputtering.

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