Kromka, Alexander; Grausova, Lubica; Bacakova, Lucie; Vacik, Jiri; Rezek, Bohuslav; Vanecek, Milan; WILLIAMS, Oliver; HAENEN, Ken
The impact of boron doping level of nanocrystalline diamond (NCD) films on the character of cell growth (i.e., adhesion, proliferation and differentiation) is presented. Intrinsic and boron-doped NCD films were grown on Si/SiO2 substrates by microwave plasma CVD process. The boron-doped samples were grown by adding trimethylboron JMB) to the gas mixture of methane and hydrogen. Highly resistive (0 ppm), semiconducting (133 or 1000 ppm), and metallic-like (6700 ppm) NCD films were tested as the artificial substrates for the cultivation of osteoblast-like MG 63 cells. The conductivity and surface charge increased monotonically with the increasing boron content. All NCD substrates...
(6; application/pdf) - 15-ene-2015
Van Gestel, D.; Gordon, I.; Carnel, L.; Pinckney, L.; Mayolet, A.; D'Haen, Jan; Beaucarne, Guy; Poortmans, J.
Efficient polycrystalline-silicon (pc-Si) solar cells on foreign substrates could lower the price of photovoltaic electricity. Alumnium-induced crytallization (AIC) of amorphous silicon followed by epitaxial thickening at high temperature seems a good way to obtain efficient pc-Si solar cells. Due to its transparency and low cost, glass is well suited as substrate for pc-Si cells. However, most glass substrates do not withstand temperatures around 1000°C that are needed for high-temperature epitaxial growth. In this paper we investigate the use of experimental transparent glass-ceramics with high strain-point temperatures as substrates for pc-SI solar cells. AIC needs layers made on these substrates showed...
Carnel, L.; Gordon, I.; Van Gestel, D.; Pinckney, L.; Mayolet, A.; D'HAEN, Jan; Beaucarne, Guy
Thin-film polysillicon solar cells on foreign substrates are often considered as promising low cost alternative to bulk silicon solar cells. Until now however, the obtained efficiencies and open-circuit voltages are far below those of other technologies. In this paper, we show how the open-circuit voltage can be enhanced significantly using an amorphous silicon-crystalline silicon heterojunction emitter instead of a diffused homojunction emitter. Open-circuit voltages up to 536 mV were obtained for polysilicon solar cells with a p-n structure on foreign substrates.