1. Temas de Física para Ingeniería: Semiconductores - Beléndez Vázquez, Augusto; Pastor Antón, Carlos; Martín García, Agapito
Semiconductores intrínsecos: Electrones y huecos. Semiconductores extrínsecos: Tipos "p" y "n". Ecuación del semiconductor. Condición de neutralidad eléctrica.

2. Dynamics of Field Domains in Semiconductor Superlattices - Semiconductor Superlattices,Michael Patra
this paper dealing the with eoeects of disorder should be repeated. Then, experimental verications might not be so important as they are for the present model. Finally, I believe that the connection between the physics of semiconductors in the form of a non-trivial device and nonlinear dynamics has been a very successful one. Without the meth103 104 CHAPTER 8. CONCLUSIONS ods from nonlinear dynamics, many of the results of this thesis would not have been possible or at least much more diOEcult to obtain. Even though many questions are still open and are waiting to be answered, the results in this thesis still have lead to a better understanding of the investigated system. Appendix A Quantitative Analysis...

3. Temas de Física para Ingeniería: Conducción en semiconductores - Beléndez Vázquez, Augusto; Pastor Antón, Carlos; Martín García, Agapito
Fenómenos de transporte en semiconductores. La corriente de arrastre: conductividad. La corriente de difusión. Densidad de corriente total. Efecto Hall en semiconductores.

4. Modeling Semiconductor Optical Devices - G. E. Sartoris; J. Leuthold
In this article numerical methods used to model photonic devices are presented. In particular, the governing equations describing the problem, the coupling between electrical and optical fields, and the numerical algorithms used for computing solutions are discussed. As a computational example, we present the modeling of a semi-conductor optical amplifier employed as an all-optical demultiplexer. Keywords: semiconductor, optical devices, modeling 1. Introduction Semiconductor modeling plays an important role in the industrial development cycle. As a result, several modeling tools are nowadays available to model semiconductor devices, however, for photonic devices this is generally not the case. Peculiar to these devices...

5. Estabilidad estructural y polimorfismo en semiconductores IVa y IIIa-Va a alta presión - Mújica Fernaud, Andrés
Se estudian las fases de alta presión en los semiconductores del grupo IVa Si y Ge en los compuestos binarios de la familia IIIa-Va A1P, A1As, A1Sb, GaAs, GaP, InP e InAs. El método utilizado en el cálculo de la energía interna de las distintas fases en una aplicación de la teoría del Funcional de la Densidad en el formalismo de pseudopotenciales y ondas planas.

6. Estabilidad estructural y polimorfismo en semiconductores IVa y IIIa-Va a alta presión - Mújica Fernaud, Andrés
Se estudian las fases de alta presión en los semiconductores del grupo IVa Si y Ge en los compuestos binarios de la familia IIIa-Va A1P, A1As, A1Sb, GaAs, GaP, InP e InAs. El método utilizado en el cálculo de la energía interna de las distintas fases en una aplicación de la teoría del Funcional de la Densidad en el formalismo de pseudopotenciales y ondas planas.

7. Global existence of solutions for the nonlinear Boltzmann equation of semiconductor physics. - Mustieles Moreno, Francisco José
In this paper we give a proof of the existence and uniqueness of smooth solutions for the nonlinear semiconductor Boltzmann equation. The method used allows to obtain global existence in time and uniqueness for dimensions 1 and 2. For dimension 3 we can only assure local existence in time and uniqueness. First, we define a sequence of solutions for a linearized equation and then, we prove the strong convergence of the sequence in a suitable space. The metod relies on the use of interpolation estimates in order to control the decay of the solution when the wave vector goes to...

8. Synthesis and characterization of electro-crystallized Cd-Sn-Se semiconductor films for application in non-aqueous photoelectrochemical solar cells - Datta, Jayati, Materials Science & Engineering, Faculty of Science, UNSW; Bhattaharya, C, Materials Science & Engineering, Faculty of Science, UNSW; Bandyopadhyay, Srikanta, Materials Science & Engineering, Faculty of Science, UNSW
In the present investigation, thin films of CdSnSe have been developed on transparent conducting oxide (TCO) coated glasses by electrolytic deposition. The controlled incorporation of Sn in the semiconducting layer have been achieved by varying the concentration of Sn2+ from 5 to 22 g/l of SnCl2 in the deposition bath. The semiconductor film grown on the glass substrate consisted of n-type CdSnSe semiconductor compounds (alloyed and/or mixed type) in the form of highly dispersed, spherically shaped polycrystallites as detected from X-ray diffraction (XRD) studies, atomic force microscopy (AFM) and scanning electron microscopy (SEM). Their optoelectronic properties were determined by spectroscopic...

9. Digest of papers / Semiconductor Test Conference. - Semiconductor Test Conference.
1 v. :

10. Digest of papers / Semiconductor Test Symposium. - Semiconductor Test Symposium.
4 v. :

11. Caracterización estructural propiedades eléctricas y ópticas de semiconductor CulnSe2 oxidado y del sistema (CuIn1-xSe2) (In2O3)x/2 / José Gregorio Albornoz - Albornoz, José Gregorio; Universidad de Los Andes. Centro de Estudios de Semiconductores. Postgrado en Química Aplicada, tesis, 1994
Mecanografiado.

12. Massively Parallel Methods for Semiconductor Device Modelling - R. K. Coomer; I.G. Graham; Bath Ba Ay
In this paper we describe, analyse and implement a parallel iterative method for the solution of the steady-state drift diffusion equations governing the behaviour of a semiconductor device in two space dimensions. The unknowns in our model are the electrostatic potential and the electron and hole quasi-Fermi potentials. Our discretisation consists of a finite element method with mass lumping for the electrostatic potential equation and a hybrid finite element with local current conservation properties for the continuity equations. A version of Gummel's decoupling algorithm which only requires the solution of positive definite symmetric linear systems is used to solve the...

13. Evaluating performance of a pixel array semiconductor SPECT system - Kubo, Naoki; Zhao, Songji; Fujiki, Yutaka; Kinda, Akiyoshi; Motomura, Nobutoku
Objectives: Small animal imaging has recently been focused on basic nuclear medicine. We have designed and built a small animal SPECT imaging system using a semiconductor camera and a newly designed collimator. We assess the performance of this system for small object imaging. Methods: We employed an MGC1500 (Acrorad Co.) camera including a CdTe semiconductor. The pixel size was 1.4 mm/pixel. We designed and produced a parallel-hole collimator with 20-mm hole length. Our SPECT system consisted of a semiconductor camera with the subject holder set on an electric rotating stage controlled by a computer. We compared this system with a conventional small animal SPECT system comprising a...

14. INTRODUCTION TO ADVANCED SEMICONDUCTOR MEMORIES - Semiconductor Memories Overview
The goal of Advanced Semiconductor Memories is to complement the material already covered in Semiconductor Memories. The earlier book covered the following

15. INTRODUCTION TO ADVANCED SEMICONDUCTOR MEMORIES - Semiconductor Memories Overview
The goal of Advanced Semiconductor Memories is to complement the material already covered in Semiconductor Memories. The earlier book covered the following

16. Numerical investigations on the performance of external-cavity mode-locked semiconductor lasers - Mulet, Josep; Moerk, Jesper
12 pages, 11 figures.-- Communication presented at: Semiconductor Lasers and Laser Dynamics (Strasbourg, France, 27 Apr 2004).

17. Reducing The Variance Of Cycle Times In Semiconductor Manufacturing Systems - M. Mittler; A. K. Schömig; N. Gerlich
: In semiconductor manufacturing, due to rework and re-entrant flow, overtaking of wafers can occur. The effect of overtaking is that cycle times at successive service centers are not mutually independent. As far as the distribution of cycle times is concerned, only higher moments are affected, the mean cycle time remaining unchanged by the influence of overtaking. Further, in the literature, it is conjectured that variance of cycle times increases when overtaking increases. Taking into account this conjecture, we attempt at reducing the variability of cycle times by diminishing the magnitude of overtaking. This can be done by reversing the...

18. Reducing The Variance Of Cycle Times In Semiconductor Manufacturing Systems - M. Mittler; A. K. Schömig; N. Gerlich
In semiconductor manufacturing, due to rework and re-entrant flow, overtaking of wafers can occur. The effect of overtaking is that cycle times at successive service centers are not mutually independent. As far as the distribution of cycle times is concerned, only higher moments are affected, the mean cycle time remaining unchanged by the influence of overtaking. Further, in the literature, it is conjectured that variance of cycle times increases when overtaking increases. Taking into account this conjecture...

19. Stabilization of Feedback-Induced Instabilities in Semiconductor Lasers - T. Heil; I. Fischer; W. Elsäßer
We present extensive studies on feedback-induced instabilities in semiconductor lasers (SLs) subject to delayed optical feedback. We demonstrate that a sufficient reduction of the linewidth enhancement factor # changes the dynamical structure of the system such that permanent emission in a stable emission state is achieved. This behaviour can be well understood on the basis of the Lang-Kobayashi rate equation model. We give first experimental evidence for its major theoretical predictions concerning the stable emission state and investigate the robustness of this stable state against external perturbations. We demonstrate that noise-induced escape from the basin of attraction of the stable...

20. Potencia termoeléctrica en semiconductores / Miriam Chourio - Chourio, Miriam
Trabajo de grado presentado para optar al título de Licenciado en Física

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