Friday, May 22, 2015

 

 



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rss_1.0 Otros recursos con las palabras clave CM

Resultados 1 - 10 de 2,623 de CM. (0 segundos)

Documentos:
1. (�) Benthic and substrate cover data derived from a time series of photo-transect surveys for the Eastern Banks, Moreton Bay Australia, 2004-2014 - Roelfsema, Chris M; Kovacs, Eva M; Phinn, Stuart R
Abstract of paper has to be provided by author.
(application/zip, 8 datasets) - 19-may-2015

2. (�) Inorganic carbon and geochemistry measurements from landfast sea ice in Resolute Passage, Nunavut, Canada, as part of the Arctic-ICE project, May - June 2010 - Brown, Kristina Anne; Miller, Lisa Ann; Mundy, Christopher John; Papakyriakou, Tim N; Francois, Roger; Gosselin, Michel; Carnat, Gauthier; Swystun, Kyle; Tortell, Philippe Daniel
We conducted a six-week investigation of the sea ice inorganic carbon system during the winter-sprin ...
(application/zip, 5 datasets) - 14-may-2015

3. (�)
CMOS-MEMS and in esti-mating the effects of process variations such as mask mis-alignment. The models presented in this paper are aimed at FIGURE 1. (a) Model of a CMOS cantilever beam composed of
(application/pdf) - 08-abr-2015

4. (�) 11) - Te Di
ed
(application/pdf) - 07-abr-2015

5. (�) Methodology for Model Generation with Accuracy from DC to RF - Xisheng Zhang; Mark Williams; Zhihong Liu
This paper presents an example modeling flow for generating a RF CMOS model. Initially, the ... discussion on the issues related to advanced CMOS technology: gate tunneling current, measuring gate
(application/pdf) - 05-abr-2015

6. (�) A 3 Gb/s optical detector standard 0.18um CMOS - Saša Radovanović; Anne-johan Annema; Bram Nauta
and a pre-amplifier in a standard 0.18µm CMOS technology. 3Gb/s data-rate was achieved at λ=850nm ... magnitude higher than that of current state-of-the-art optical detectors in standard CMOS. High speed
(application/pdf) - 04-abr-2015

7. (�) Parameter - Qing He; Kirk T. Mcdonald
strength in liquid argon. The electron drift velocity is 1.63 ± 0.03 mm/µs at E = 500 V/cm and T ... nominal drift field in μBooNE is E = 500 V/cm, and the peak electric field at the surface of the
(application/pdf) - 31-mar-2015

8. (�) Performance Comparison of RF CMOS Low Noise Amplifiers in 0.18-µm technology scale - M. Sumathi; S. Malarvizhi
on CMOS technology. The design concepts give an useful indication to the design trade-offs associated ... rules of TSMC 0.18-µm CMOS technology and this work mainly proposed for IEEE 802.11a applications. With
(application/pdf) - 31-mar-2015

9. (�) Digital Object Identifier 10.1109/JSSC.2006.882679 - Derek K. Shaeffer; Thomas H. Lee; Ramón Salazar; Javier Salcedo
The authors of the above paper [1], [2] would like to correct a transcription error appearing in exp ...
(application/pdf) - 31-mar-2015

10. (�) Modified Low Power Dynamic Adder for High Performance - R. Sakthivel; Harish M Kittur
This paper proposes a modified form of the design for low dynamic power adder using a reset network in the CMOS dynamic logic family. The results show that the dynamic power reduces as compared to
(application/pdf) - 31-mar-2015

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